advanced power p-channel enhancement mode electronics corp. power mosfet low gate charge bv dss -30v single drive requirement r ds(on) 9m lower on-resistance i d -48a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 4 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data and specifications subject to change without notice 200812302 halogen-free product 1 + 25 -48 0.25 31.3 -55 to 150 -55 to 150 AP6679GI-HF rating -30 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v continuous drain current, v gs @ 10v -30 pulsed drain current 1 300 parameter total power dissipation operating junction temperature range storage temperature range linear derating factor thermal data g d s g d s to-220cfm(i) advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220cfm isolation package is widely preferred for all commercial-industrial through hole applications. free datasheet http:///
AP6679GI-HF electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =-1ma - -0.02 - v/ : r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-30a - - 9 m ? ? ? free datasheet http:///
AP6679GI-HF fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 5 15 25 35 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -24a t c =25 : 0 70 140 210 280 01234 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -8.0v -6.0v -4.5v v g =-3.0v 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-30a v g =-10v 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -8.0v -6.0v -4.5v v g =-3.0v free datasheet http:///
AP6679GI-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 100 1000 10000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 4 8 12 16 0 20406080 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -30a v ds = -25v 1 10 100 1000 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) 100us 1ms 10ms 100ms dc t c =25 o c single pulse 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse free datasheet http:///
package outline : to-220cfm millimeters min nom max a 4.30 4.70 4.90 a1 2.30 2.65 3.00 b 0.50 0.70 0.90 b1 0.95 1.20 1.50 c 0.45 0.65 0.80 c2 2.30 2.60 2.90 e 9.70 10.00 10.40 l 12.00 --- 15.00 l3 2.91 3.41 3.91 l4 14.70 15.40 16.10 ---- 3.20 ---- e ---- 2.54 ---- 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-220cfm symbols advanced power electronics corp. package code 6679gi part number date code (ywwsss) y last digit of the year ww week sss sequence if last "s" is numerical letter : rohs product if last "s" is english letter : hf & rohs product ywwsss logo a1 a c e b b1 e l4 c2 a1 a c e b b1 e l4 c2 l3 l meet rohs requirement for low voltage mosfet only 5 free datasheet http:///
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